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  Datasheet File OCR Text:
 Transys
Electronics
LIMITED
NPN DARLINGTON POWER SILICON TRANSISTOR
BD 675 (BPL) TO-126
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE VCBO 45 Collector -Base Voltage VCEO 45 Collector -Emitter Voltage VEBO 5.0 Emitter Base Voltage IC 4.0 Collector Current IB 0.1 Base Current PD 40 Power Dissipation @ Tc=25 deg C 0.32 Derate Above 25 deg C Tj 150 Junction Temperature Tstg -55 to +150 Storage Temperature Range Thermal Resistance Rth(j-c) 3.13 Junction to Case ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION VCEO(sus)* IC=50mA, IB=0 Collector Emitter (sus) Voltage ICEO VCE=23V, IB=0 Collector Cut off Current ICBO VCB=45V, IE=0 Tc=100 deg C VCB=45V, IE=0 VBE=5V,IC=0 IC=500mA, VCE=5V IC=1.5A, IB=30mA IC=1.5A, VCE=3V IC=50mA, VCE=10V,
UNIT V V V A A W W/deg C deg C deg C deg C/W MIN 45 TYP MAX 500 0.2 UNIT V uA mA
IEBO Emitter Cut off Current hFE* DC Current Gain Collector Emitter Saturation Voltage VCE(Sat)* VBE(on)* Base Emitter on Voltage ft Gain Bandwidth Product Pulse Test:-Pulse Width=300us, Duty Cycle=2%
800 260
-
2.0 2.0 3200 2.5 2.5 -
mA mA V V MHz
TO-126 (SOT-32) Plastic Package
C N P B
1 2 3
A
D IM A B C D E F G L M N P S
M IN .
M AX .
S
D M F E G
STANDARD PACK Net Weight/Qty INNER CARTON BOX Qty 2.0K
Packing Detail
PACKAGE Details TO-126 Size Size OUTER CARTON BOX Qty Gr Wt 32.0K 31 kgs 500 pcs/polybag 340 gm/500 pcs 3" x 7.5" x 7.5" 17" x 15" x 13.5"
All dimensions in mm.
1 2 3
L
P IN C O N FIG U R ATIO N 1. E M ITTE R 2. C O LLEC TO R 3. B AS E
7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.25 TY P. 0.49 0.75 4.5 TY P. 15.7 TY P. 1.27 TY P. 3.75 TY P. 3.0 3.2 2.5 TY P.


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